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Sheet‐resistance characterization of ion‐implanted silicon resistors at cryogenic temperatures

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1 Author(s)
Sasaki, N. ; Semiconductor Advanced Technology Division, Fujitsu Limited, Kawasaki 211, Japan

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Sheet resistance of both n‐ and p‐type silicon resistors fabricated by using ion implantation are studied in a wide temperature range from 300 to 1.1 K. Significant sheet‐resistance temperature dependence is achieved if the peak concentration, for the case of complete activation, is less than Nc, where Nc is the impurity concentration of the metal‐insulator transition. Sheet‐resistance temperature dependence sufficient for temperature sensors can be obtained for peak concentration larger than Nc, provided that post‐implant anneal temperatures are kept low enough to realize incomplete activation. Compensation of a phosphorus‐implanted layer by boron implantation can increase the temperature sensitivity for the case of complete activation if the phosphorus concentration is lower than Nc and the compensation ratio is small, about 8%.

Published in:

Journal of Applied Physics  (Volume:62 ,  Issue: 4 )

Date of Publication:

Aug 1987

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