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Growth of ZnSe on Ge(100) substrates by molecular‐beam epitaxy

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4 Author(s)
Yamaguchi, Eiji ; Electronics Materials Laboratory, Sumitomo Metal Mining Co., Ltd., 1‐6‐1 Suehiro‐cho, Ohme‐shi, Tokyo 198, Japan ; Takayasu, Ichiro ; Minato, Tetsuo ; Kawashima, Mitsuo

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Epitaxial growth of ZnSe on Ge(100) substrates by molecular‐beam epitaxy was investigated and compared with the simultaneous growth on GaAs(100). Single crystalline ZnSe on Ge was obtained with a flat and smooth surface at a temperature of higher than 370 °C and flux ratio JSe/JZn of around 2.0. The crystal quality, as revealed by double‐crystal x‐ray rocking curves, was not superior to that grown on GaAs, despite a better lattice parameter match with the substrate. This is due to the fact that the grown layer contains antiphase domains and inclines against the Ge substrate towards 〈011〉 by about 0.1°.

Published in:

Journal of Applied Physics  (Volume:62 ,  Issue: 3 )