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Radiation damage induced in the surface of gallium arsenide (GaAs) by reactive ion etching (RIE)is studied using physical and electrical analyses. The number of displaced Ga and As atoms observed by Rutherford backscattering spectrometry aligned spectra is 7.8×1015 cm-2 and 1.3×1016 cm-2 at rf power of 300 W (0.47 W/cm2) and 500 W (0.78 W/cm2), respectively. The barrier height of the Schottky electrode formed on the undamaged layer is 0.745 V. The height decreases with increasing rf power and reaches 0.47 V at 0.78 W/cm2. Carrier concentration at the surface of the GaAs channel layer decreases with increasing rf power. The damage can be reduced by annealing at 400 °C for 30 min. For instance, the barrier height at 300 W increases from 0.47 to 0.70 V, and the carrier concentration increases from 7.0×1016 to 1.3×1017 cm-3. However, the carrier concentration cannot recover to the same level as that of an undamaged layer with annealing at 400 °C. The temperature conventionally employed in GaAs electrode annealing process.