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Use of a carbon‐alloyed graded‐band‐gap layer at the p/i interface to improve the photocharacteristics of amorphous silicon alloyed p‐i‐n solar cells prepared by photochemical vapor deposition

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4 Author(s)
Kim, W.Y. ; Department of Physical Electronics, Tokyo Institute of Technology, 2‐12‐1 Ohokayama, Meguroku, Tokyo 152, Japan ; Tasaki, H. ; Konagai, M. ; Takahashi, K.

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Amorphous silicon alloyed p‐i‐n solar cells have been fabricated using a separate chamber photochemical vapor deposition system. The photocharacteristics of such cells have been modestly improved by the addition of a carbon‐alloyed graded‐band‐gap layer at the p(a‐SiC:H)/i(a‐Si:H) heterointerface. The best efficiency obtained for a glass/TCO (transparent conductive oxide)/p(a‐SiC:H)/i(a‐Si:H)/n(μc‐Si:H)/metal structure of this type was 11.2% for a 3×3 mm2 cell; other parameters were Voc=0.882 V, Isc=18.05 mA/cm2, and a fill factor (FF) of 0.702.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 8 )