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Monte Carlo simulations of amorphous hydrogenated silicon thin‐film growth are carried out to examine the effects of film growth reactions, etching reactions, and surface diffusion on three‐dimensional film structure. Although a simulated film contains 1000 silicon atoms or less, the hydrogen content and density can be extrapolated to bulk values. The predicted bulk values of the hydrogen content, 11–44 at. %, and density, 1.8–2.0 g/cm3, are consistent with experimental results. The surface diffusion of silicon‐containing species is found to have the most significant effect on the final film properties. A knowledge of the specific chemical mechanism leading to film growth is not assumed.