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Crystalline defects in heteroepitaxial GaAs/(Ca,Sr)F2 grown by molecular‐beam epitaxy

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5 Author(s)
Fontaine, C. ; Laboratoire d’Automatique et d’Analyse des Systèmes du Centre National de la Recherche Scientifique, 7, avenue du Colonel Roche, 31077 Toulouse Cedex, France ; Munoz‐Yague, A. ; H eral, H. ; Bernard, L.
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The crystallinity of GaAs/(Ca,Sr)F2 structures grown by molecular‐beam epitaxy on (100) and (111) B‐oriented GaAs substrates is studied by transmission electron microscopy. The main defects found in the GaAs heteroepitaxial layers were microtwins and dislocations. The geometry and the origin of these defects are discussed in terms of growth and stress relaxation mechanisms, and placed within the framework of published results on similar heteroepitaxial systems. The results obtained on (111)‐oriented layers suggest the preeminent role played by stress at growth temperature.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 8 )