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〈110〉 channeled depth distributions and values of electronic stopping for the fourth‐row transition elements (Z=19 – 28) in the silicon crystal

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1 Author(s)
Wilson, R.G. ; Hughes Research Laboratories, Malibu, California 90265

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.337860 

We report experimentally measured depth distributions of the transitions elements of the fourth row of the periodic table channeled in the 〈110〉 direction of the Si crystal and calculate the corresponding values of electronic stopping Se. These values show the Z1‐dependent nature of electronic stopping in this region of atomic number. The 〈110〉 channeled depth distributions of these transition (d shell) elements exhibit three peaks; the possible origin of the middle peak, which is not observed for the nontransition elements, is discussed.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 8 )

Date of Publication:

Apr 1987

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