By Topic

On the temperature dependence of the Mott–Schottky characteristics of high‐barrier Ti–p‐Si metal‐insulator‐semiconductor diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Lootens, D.U. ; Laboratorium voor Kristallografie en Studie van de Vaste Stof, Rijksuniversiteit Gent, Krijgslaan 281, B‐9000 Gent, Belgium ; Hanselaer, P.L. ; Laflere, W.H. ; Van Meirhaeghe, R.L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.337990 

Mott–Schottky characteristics of Ti–p‐Si metal‐oxide‐semiconductor diodes have been studied as a function of temperature and doping concentration. It was concluded that the contact gives rise to a strongly inverted semiconductor surface. Under these conditions, it is known that the value of the voltage intercept associated with the Mott–Schottky characteristics is only an underestimation of the built‐in voltage. This offers an explanation for the anomalous temperature dependence of the barrier height determined from Mott–Schottky plots, as reported by several authors.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 6 )