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Mott–Schottky characteristics of Ti–p‐Si metal‐oxide‐semiconductor diodes have been studied as a function of temperature and doping concentration. It was concluded that the contact gives rise to a strongly inverted semiconductor surface. Under these conditions, it is known that the value of the voltage intercept associated with the Mott–Schottky characteristics is only an underestimation of the built‐in voltage. This offers an explanation for the anomalous temperature dependence of the barrier height determined from Mott–Schottky plots, as reported by several authors.