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The thermally stimulated current (TSC) rate equations have been solved numerically, taking into consideration the T-2 dependence of the cross section on the temperature T. Values of the trap depth E and the capture cross section have been calculated for fourteen defect levels in the traveling heater method grown CdTe crystal. To solve the TSC rate equations numerically, one needs to know the concentrations of carriers in traps at the initial temperature, the concentrations of trapping states, and the recombination lifetime for the carrier. These quantities have also been measured experimentally. For the first eight peaks, the results are almost the same as those for slow retrapping. For the last six defect levels, the values of E are smaller than those of fast retrapping and differ by 100–150 meV from those calculated in the slow‐retrapping approximation.