By Topic

Zinc diffusion in n‐type indium phosphide

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
van Gurp, G.J. ; Philips Research Laboratories, P. O. Box 80.000, 5600 JA Eindhoven, The Netherlands ; Boudewijn, P.R. ; Kempeners, M.N.C. ; Tjaden, D.L.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.338028 

Profiles of Zn in n‐type InP〈100〉 wafers after ampoule diffusion were measured by secondary‐ion mass spectrometry, Auger electron spectrometry, differential Hall‐effect measurements, capacitance measurements, and scanning electron microscopy. The results can be explained by an interstitial‐substitutional mechanism, in which Zn diffuses as a singly ionized interstitial and is incorporated in the In sublattice as an electrically active substitutional acceptor or as an electrically inactive complex. At Zn concentrations lower than the background donor concentration the profile is cut off, as interstitial diffusion breaks down. The acceptor solubility increases with background donor concentration. Activation energies for diffusion and solubility were found to be 1.40 and 1.0 eV, respectively.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 5 )