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Effect of stress relaxation on polarization of InGaAsP buried heterostructure lasers by a repetitive temperature change

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4 Author(s)
Yano, M. ; Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya Atsugi 243‐01, Japan ; Kanno, Y. ; Ishikawa, H. ; Imai, H.

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This paper describes the effect of stress relaxation on the polarization of InGaAsP buried heterostructure lasers by means of a repetitive temperature change. We examine the change in the polarization ratio, TE mode power to TM mode power, under the repetitive temperature change. We find that the polarization ratio increases significantly for some lasers. This may be attributable to the relaxation of an external stress caused by bonding of the laser chip.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 5 )

Date of Publication:

Mar 1987

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