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Field fluctuations due to dopants in a p+-n junction have been calculated and used to study the effects on the impact ionization rate with a Monte Carlo simulation. Results are plotted along the direction normal to the interface. We report that the field fluctuations have no effect on the ionization rate in the dead space and a small and spatially delayed effect in the region after the dead space even though the field shows large and rapid fluctuations. A similar ‘‘averaged‐out’’ effect is also shown for the average electron energy. The enhancement in the ionization rate due to the field fluctuations which Shockley expected in his pioneering research is shown to be negligibly small.