Cart (Loading....) | Create Account
Close category search window

Modification of dopant profiles due to surface and interface interactions: Applications to semiconductor materials

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jagannadham, K. ; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695‐7916 ; Narayan, J.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The kinetics of segregation of dopant solute atoms in the presence of free surfaces and interfaces are analyzed by solving the diffusion equation with a drift term. The drift term includes the configurational interaction energy associated with an oversize or an undersize atom near a coherent interface when the continuity conditions are satisfied. Both an analytical solution and a numerical procedure are provided to solve the problem by eigenfunction expansion method. A new procedure for evaluating the eigenvalues to include higher‐order terms is given. It is further established that an attractive force due to either a soft second phase or a free surface gives rise to a minimum in the concentration profile near the interface while a hard second phase results in a monotonically increasing concentration. The position of the minimum in the concentration profile in the presence of a soft second phase or the slope of the concentration profile in the presence of a hard second phase provides a measure of the strength of the defect and the interaction‐energy term which can be compared with experimental observations. In particular, we have considered changes in the dopant profiles in silicon under the influence of the free surface, in silicon with silicon dioxide, gallium arsenide, germanium, magnesium oxide and in germanium with silicon, all deposited as a second phase, respectively.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 3 )

Date of Publication:

Feb 1987

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.