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This paper demonstrates the design ideas of composite‐cavity waveguide complementary semiconductor lasers for improving lateral‐mode characteristics. As a first example, we fabricated sectional constricted‐planar composite‐cavity semiconductor lasers by connecting a gain‐guided oxide‐stripe laser and an index‐guided constricted double‐heterostructure laser. Threshold current as low as 29 mA, fundamental lateral‐ and single longitudinal‐mode oscillation with large‐output power, and wavelength locking over a temperature range of 4 °C have been achieved.