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Induced inversion at a silicon ferroelectric copolymer interface

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5 Author(s)
Langlois, J.‐M. ; Collège Militaire Royal de Saint‐Jean, Saint‐Jean‐sur‐Richelieu, Québec, Canada J0J 1R0 ; Noirhomme, B. ; Filion, A. ; Rambo, A.
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A copolymer of vinylidene fluoride and tetrafluoroethylene is solution cast on a p‐type silicon wafer. The dipoles in the copolymer are aligned by corona charging the film or by biasing a subsequently evaporated aluminum gate. The field coupling to the semiconductor is studied by measuring the surface channel currents which flow between a metal‐insulator‐semiconductor source and drain. We show that the field coupling following corona injection is sufficient to induce a strong inversion in silicon and that this effect decays with a time constant which can vary between a few minutes to approximately one day.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 12 )