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Characteristics of the Si‐SiO2 interface states in thin (70–230 Å) oxide structures

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2 Author(s)
Kar, S. ; Department of Electrical Engineering and Advanced Center for Materials Science, Indian Institute of Technology, Kanpur‐208016, India ; Narasimhan, R.L.

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Important characteristics of the Si‐SiO2 interface states, such as the interface state density distributions and the electron and the hole capture cross section versus energy profiles, were investigated in unannealed metal/silicon dioxide/silicon (MOS) structures with the gate oxide thickness in the range of 70–230 Å, using the optical MOS admittance technique. The experimentally obtained interface state density distribution, in case of p‐Si/SiO2/Al structures, exhibited two peaked profiles, one near the valence‐band edge Ev and the other near the conduction‐band edge Ec, overlying a concave background. The state density at the peak was observed to undergo a maximum, preceded by a minimum, as the gate oxide thickness tox was increased. The peak energy versus tox and the capture cross section versus tox profiles also indicated strong features.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 12 )

Date of Publication:

Jun 1987

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