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We have developed a technique for the fabrication of shallow, silicided n+-p and p+-n junctions with good electrical characteristics. The technique utilizes the ion implantation of dopants into silicide layers previously formed by ion‐beam mixing with Si ions and low‐temperature annealing, and the subsequent drive‐in of implanted dopants into the Si substrate to form shallow junctions. This technique can be applied to the fabrication of metal‐oxide‐semiconductor field‐effect transistor in a self‐aligned fashion and can have a significant impact on complementary metal‐oxide‐semiconductor devices.