Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.338331
Significant errors in the determination of carrier profiles obtained by the Hall‐effect method result if the depletion effect at a semiconductor surface is not taken into account. A practical procedure for correcting the apparent measured carrier profiles for this surface‐depletion effect is described for nonuniformly doped semiconductors. This correction method is then applied to Si‐implanted GaAs and the results are compared with those of capacitance‐voltage measurements. The number of total trapped charges in free‐surface states are estimated to be about 1×1012 cm-2.