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Evidence for EL6 (Ec- 0.35 eV) acting as a dominant recombination center in n‐type horizontal Bridgman GaAs

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3 Author(s)
Fang, Zhao‐Qiang ; Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennyslvania 15213 ; Schlesinger, T.E. ; Milnes, A.G.

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Horizontal Bridgman grown n‐type GaAs is shown to contain two important electron traps EL6 (0.35 eV) and EL2 (0.80 eV) in the 1015 cm-3 concentration range. A heat treatment at 800 °C for 1 h results in the reduction of EL6 to about 1013 cm-3 to a depth of at least 10 μm and an increase in EL2 by an amount about equal to the reduction of EL6. Measurement of the minority‐carrier (hole) diffusion lengths in this depth range by an electron beam induced current (EBIC) technique shows an inverse correlation with the concentration of the EL6 trap. The results may be explained if EL6 is assumed to be VGa‐VAs, EL2 to be AsGa‐VAs, and the interaction between the two traps to involve Asi.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 11 )