Cart (Loading....) | Create Account
Close category search window

Microstructural characterization of nitrogen‐implanted silicon‐on‐insulator

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Chang, P.‐H. ; Central Research Laboratories, Texas Instruments, Inc., MS 147, Dallas, Texas 75265 ; Slawinski, C. ; Mao, B.‐Y. ; Lam, H.W.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The effects of implant dose and postimplant annealing treatment on the microstructure of nitrogen‐implanted silicon‐on‐insulator were studied by cross‐sectional transmission electron microscopy techniques. In the lower dose case (0.75×1018/cm2) an amorphous silicon layer forms after implantation. Annealing at 1200 °C or higher results in a buried polycrystalline α‐Si3N4 layer containing many randomly oriented silicon particles. Higher dose implantation results in an amorphous silicon‐nitride layer. A porous layer also forms in the middle of the amorphous layer if the implant dose is 1.2×1018/cm2 or higher. The crystallization of the amorphous layer in the higher dose cases is shown to happen in two steps. In the first step nucleation and growth of α‐Si3N4 grains occur in the amorphous nitride region to form a spherulitic polycrystalline structure. The second step is the cellular growth of the spherulitic nitride grains into the crystalline silicon regions. Silicon particles are trapped at the cell walls as the cellular reaction advances. These particles are conglomerated and sphereodized but retain the same orientation as the substrate silicon at higher temperatures. The quality of the top silicon film is excellent after annealing at 1200 °C or higher, irrespective of the implant dose.

Published in:

Journal of Applied Physics  (Volume:61 ,  Issue: 1 )

Date of Publication:

Jan 1987

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.