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Identification of hydrogen platelets in proton‐bombarded GaAs

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2 Author(s)
Neethling, J.H. ; Department of Physics, University of Port Elizabeth, P. O. Box 1600, Port Elizabeth, 6000, South Africa ; Snyman, H.C.

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The technique of cross‐sectional transmission electron microscopy has been applied to study the nature of the radiation damage in GaAs bombarded with 300 keV protons to total doses of 1015 and 5×1015 protons cm-2. The results indicate that upon annealing at temperatures of 500 °C and above, the precipitated damage becomes visible in the form of hydrogen platelets (i.e., hydrogen‐filled edge vacancy loops) on the {110} cleavage planes of GaAs.

Published in:

Journal of Applied Physics  (Volume:60 ,  Issue: 3 )

Date of Publication:

Aug 1986

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