Cart (Loading....) | Create Account
Close category search window
 

Spatially resolved ellipsometry

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Erman, M. ; Laboratoires d’Electronique et de Physique Appliquée, 3, Avenue Descartes, 94450 Limeil Brévannes, France ; Theeten, J.B.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.337327 

Using a convergent beam approach, a spatially resolved ellipsometry (SRE) has been achieved. The modifications and the limitations due to the use of such a nonplanar wave for an ellipsometric measurement are discussed. We first established the relations between the ellipsometric data (tan ψ,cos Δ), the optical properties of the sample which are assumed to be spatially nonuniform [rp(x,y) and rs(x,y)], and the optical characteristics of the beam (i.e., electric field distribution of the light on the sample surface and its angular domain Fourier transform function). These relations are established for both a coherent and an incoherent light source. We use them to investigate the absolute accuracy achievable with SRE on an homogeneous sample. It is demonstrated that submonolayer sensitivity can be obtained using a 10×10‐μm spot. In the case of a step discontinuity of rp(x,y) and rs(x,y), strong optical resonances can take place in SRE. Their quantitative analysis is performed in the (tan ψ,cos Δ) plane. In this representation, the optical resonance corresponds to a trajectory, called ‘‘spatial trajectory.’’ Another type of trajectory can be observed for a multilayer structure in the case when one (or more) thickness is slowly varying versus the position (‘‘thickness trajectory’’). The combination of both cases leads to a generalized trajectory concept which allows for a quantitative analysis of two‐dimensional ellipsometric maps. This trajectory approach is illustrated on two practical situations: (i) a SiO2 layer etched through a lithographic mask on top of a GaAs wafer; (ii) metallic patterns deposited on GaAs. It is shown that the trajectory concept is capable of analyzing patterns with lateral dimensions smaller than the actual spot size (i.e., direct optical r- esolution of SRE).

Published in:

Journal of Applied Physics  (Volume:60 ,  Issue: 3 )

Date of Publication:

Aug 1986

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.