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Zinc‐oxide thin‐film ammonia gas sensors with high sensitivity and excellent selectivity

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3 Author(s)
Nanto, H. ; Electron Device System Laboratory, Kanazawa Institute of Technology, 7‐1 Oogigaoka, Nonoichimachi, P.O. Kanazawa‐South, Ishikawa 921 Japan ; Minami, Tadatsugu ; Takata, S.

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A sensor with a high sensitivity and an excellent selectivity for ammonia gas was prepared by using sputtered ZnO thin films. The sensor exhibited an increase of resistance for exposure to ammonia gas whereas it exhibited a decrease of resistance for exposure to many other gases such as inflammable and organic gases. The resistance change and the selectivity of the sensor were enhanced by doping group III metal impurities such as Al, In, and Ga. The lower limit of the detection for ammonia gas was about 1 ppm at a working temperature of 350 °C.

Published in:

Journal of Applied Physics  (Volume:60 ,  Issue: 2 )