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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:60 Issue:10 Help

Cross‐sectional transmission electron microscope study of solid phase epitaxial growth in BF+2 ‐implanted (001)Si

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2 Author(s)
Nieh, C.W. ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China ; Chen, L.J.

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A cross‐sectional transmission electron microscope (XTEM) study of solid phase epitaxial growth in BF+2 ‐implanted (001)Si has been carried out. It is demonstrated that XTEM is unique in providing accurate, high‐resolution data on the regrowth of implantation‐amorphous layer. The activation energy for the regrowth was measured to be 3.0±0.1 eV. Uncertainties in the XTEM measurements of solid phase regrowth rate are discussed.

Published in:
Journal of Applied Physics  (Volume:60 ,  Issue: 10 )

Date of Publication: Nov 1986

Page(s):
3546 - 3549
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.337609
Product Type:
Journals & Magazines
Date of Current Version :
07 July 2009
Issue Date :
Nov 1986

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