By Topic

Spectroscopic ellipsometry study of the In1‐xGaxAsyP1‐y/InP heterojunctions grown by metalorganic chemical‐vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Drevillon, B. ; Equipe Synthèse de Couches Minces pour l’Energétique, Laboratoire de Physique Nucléaire des Hautes Energies, Ecole Polytechnique, 91128 Palaiseau, France ; Bertran, E. ; Alnot, P. ; Olivier, J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.337603 

The dielectric functions of InP, In0.53Ga0.47As, and In0.75Ga0.25As0.5P0.5 epitaxial layers have been measured using a polarization‐modulation spectroscopic ellipsometer in the 1.5 to 5.3 eV region. The oxide removal procedure has been carefully checked by comparing spectroscopic ellipsometry and x‐ray photoelectron spectroscopy measurements. These reference data have been used to investigate the structural nature of metalorganic chemical‐vapor deposition grown In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP heterojunctions, currently used for photodiodes and laser diodes. The sharpness of the interfaces has been systematically compared for the two types of heterojunctions: In1‐xGaxAsy/InP and InP/In1‐xGaxAsyP1‐y. The sharpest interface is obtained for InP growth on In0.75Ga0.25As0.5P0.5 where the interface region is estimated to be (10±10) Å thick. The importance of performing in situ SE measurements is emphasized.

Published in:

Journal of Applied Physics  (Volume:60 ,  Issue: 10 )