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A high programming throughput p-channel DINOR flash memory with the BBHE injection programming method has been developed using 0.35 /spl mu/m CMOS process. This programming method realizes a high programming throughput of 8 nsec/Byte by utilizing 512 Byte parallel program operation with a low leakage current of less than 250 /spl mu/A. We have also demonstrated the good erase/write cycling endurance of 1/spl times/10/sup 5/. This process and device technology is very promising to the high performance 64 Mbit flash memories and future flash devices.