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X‐ray double‐crystal characterization of highly perfect InGaAs/InP grown by vapor‐phase epitaxy

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2 Author(s)
Macrander, A.T. ; AT&T Bell Laboratories, Murray Hill, New Jersey 07974 ; Strege, K.E.

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Rocking curves of a 0.78‐μm layer grown on a 3.35° off‐(100) substrate by the hydride process have been compared to detailed calculations using x‐ray dynamical diffraction theory. The observed linewidth and peak convoluted reflecting power of the (400) reflection are 32 arc s and 12.4% as compared to calculated values of 26.6 arc s and 17.4%. We used a symmetric (100) InP first crystal, and the calculations were made for this exact geometry. Anomalous dispersion was not neglected. We report the observation of Bragg geometry Pendellosung fringes for this InGaAs layer. As many as six fringes having a separation of 26 arc s were found to be clearly visible. This spacing was fit to obtain the layer thickness. We conclude that, so far as we are aware, our material is the best, as judged from an x‐ray point of view, ever reported for the vapor‐phase epitaxy process.

Published in:

Journal of Applied Physics  (Volume:59 ,  Issue: 2 )