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Doping studies of Ga0.5In0.5P organometallic vapor‐phase epitaxy

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4 Author(s)
Hsu, C.C. ; Departments of Electrical Engineering and Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 ; Yuan, J.S. ; Cohen, R.M. ; Stringfellow, G.B.

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Undoped Ga0.5In0.5P has been successfully grown by organometallic vapor‐phase epitaxy on GaAs substrates with a free‐electron concentration of 1016 cm-3 and a mobility of 1050 cm2/V s in nominally undoped material. The distribution coefficient of indium in the growth of Ga0.5In0.5P is nearly to unity. Both n‐ and p‐type carrier concentrations of up to 1019 cm-3 have been obtained in the present study. Diethyltelluride and silane are used as n‐type dopants. Dimethylzinc is used as the p‐type dopant. Te is a very efficient dopant with a distribution coefficient kTe=54. The photoluminescence (PL) intensity increases with Te doping level to a maximum at n=2×1018 cm-3. The silicon distribution coefficient is temperature dependent, due to the incomplete pyrolysis of silane at the growth temperature. Si‐doped Ga0.5In0.5P has a lower PL efficiency than Te‐doped samples and is not strongly correlated with carrier concentration. The incorporation efficiency of Zn is low, with kZn =3.8×10-3, due to the high vapor pressure of Zn at the growth temperature. The PL intensity of Zn‐doped Ga0.5In0.5P also increases with Zn doping level to a maximum at p=2×1018 cm-3 and is comparable to the optimum Te‐doped n‐type Ga0.5In0.5P. Only a single band‐edge PL peak is observed in all cases.

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Journal of Applied Physics  (Volume:59 ,  Issue: 2 )