Referenced Items are not available for this document.
High-performance RF devices were fabricated using standard Si ULSI processes. Suspended inductors and 0.1-/spl mu/m CMOS devices were integrated on an SOI wafer having a cavity beneath the devices. A high inductor resonance frequency of 19.6 GHz and a low 0.1-/spl mu/m SOI-NMOS noise figure as small as 0.8 dB at 2 GHz were obtained, which surpass presently available mobile telecommunication GaAs MESFETs in performance.
Published in:
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Date of Conference: 11-13 June 1996
- Page(s):
- 104 - 105
- Meeting Date :
- 11 Jun 1996-13 Jun 1996
- Print ISBN:
- 0-7803-3342-X
- INSPEC Accession Number:
- 5436083
- Conference Location :
- Honolulu, HI, USA
- Digital Object Identifier :
- 10.1109/VLSIT.1996.507810
- Product Type:
- Conference Publications
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