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Silicon RF devices fabricated by ULSI processes featuring 0.1-/spl mu/m SOI-CMOS and suspended inductors

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5 Author(s)
Hisamoto, D. ; Central Res. Lab., Hitachi Ltd., Kokubunji, Japan ; Tanaka, S. ; Tanimoto, T. ; Nakamura, Y.
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High-performance RF devices were fabricated using standard Si ULSI processes. Suspended inductors and 0.1-/spl mu/m CMOS devices were integrated on an SOI wafer having a cavity beneath the devices. A high inductor resonance frequency of 19.6 GHz and a low 0.1-/spl mu/m SOI-NMOS noise figure as small as 0.8 dB at 2 GHz were obtained, which surpass presently available mobile telecommunication GaAs MESFETs in performance.

Published in:

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Date of Conference:

11-13 June 1996