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High-performance RF devices were fabricated using standard Si ULSI processes. Suspended inductors and 0.1-/spl mu/m CMOS devices were integrated on an SOI wafer having a cavity beneath the devices. A high inductor resonance frequency of 19.6 GHz and a low 0.1-/spl mu/m SOI-NMOS noise figure as small as 0.8 dB at 2 GHz were obtained, which surpass presently available mobile telecommunication GaAs MESFETs in performance.
Date of Conference: 11-13 June 1996