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A new 2-step metal-CMP technique has been developed for both of Al- and Cu-metallization, in which an as-deposited metal film is initially planarized by a hard-pad, and then is removed by a soft pad. The 2-step CMP improves no-failure-rate of the 1 /spl mu/m-pitch Al-interconnect to 90% in 6" wafer. Combining the CMP with Cu-CMP and a new organic film patterning method such as simultaneous resist-etch-back (SRECK), the Cu/benzocyclobutene (BCB) interconnects are successfully obtained.
Date of Conference: 11-13 June 1996