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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:59 Issue:1 Help

Raman scattering by coupled plasmon‐phonon modes in n‐type Ga1-xAlxAs epitaxial layers

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4 Author(s)
Kirillov, D. ; Varian Research Center, Palo Alto, California 94303 ; Chai, Y. ; Webb, C. ; Davis, G.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.336869 

Raman scattering by coupled plasmon‐phonon modes in Ga0.75Al0.25As epitaxial layers grown by molecular beam epitaxy and metalorganic chemical vapor deposition was studied. Good agreement between predicted and observed behavior was found. It was concluded that Raman scattering can be conveniently used for nondestructive and fast evaluation of free electron concentration in these materials.

Published in:
Journal of Applied Physics  (Volume:59 ,  Issue: 1 )

Date of Publication: Jan 1986

Page(s):
231 - 233
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.336869
Product Type:
Journals & Magazines
Date of Current Version :
07 July 2009
Issue Date :
Jan 1986

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