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Ferroelectric thin films of antimony sulphoiodide (SbSI) have been grown by flash evaporation in the thickness range of 0.1–1.5 μm. Annealing the films in a sulphur atmosphere at 100 °C for 10–12 min improved their stoichiometry and crystallinity. Structural studies revealed that films deposited normal to the substrate have a tendency to grow with the c axis oriented at 6° to the substrate. The refractive index and band gap estimated from the optical transmission curves for 1.0‐μm‐thick films were found to be 4 and 1.97 eV, respectively. The measured relative dielectric constant (ϵ’) for a 1.0‐μm thick film at 100 KHz, 300 K was ∼73. Reproducible ferroelectric‐to‐paraelectric phase transitions were observed for films thicker than 0.2 μm.