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Copper interconnection deposition techniques and integration

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11 Author(s)
Gang Bai ; Components Res., Intel Corp., Santa Clara, CA, USA ; Chien Chiang ; N. Cox ; Sychyi Fang
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Copper has been deposited into prepatterned high-aspect-ratio (3:1) trenches using electroplating (EP), CVD and sputter reflow. Filling capability, electrical properties, electromigration lifetimes and mechanical stress are examined. Also, barriers against Cu diffusion are studied using electrical bias at elevated temperatures. CVD Cu can fill high aspect ratio features that electroplating cannot. Sputter-reflowed Cu can also fill high aspect ratio features, but has a high thermal budget for features >0.4 /spl mu/m. Preliminary results show that CVD Cu may be limited by electromigration lifetime.

Published in:

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Date of Conference:

11-13 June 1996