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Characterization of microstructural defects in BF+2 ‐implanted silicon

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2 Author(s)
Wu, I.W. ; Department of Materials Science and Engineering and Materials Science Center, National Tsing Hua University, Hsinchu, Taiwan, Republic of China ; Chen, L.J.

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A systematic study on the nature and evolution of the postannealing defects in BF+2 ‐implanted silicon with implantation doses ranging from 5×1014 to 1×1016 cm-2 is reported. The type, nature, size, distribution, and density of the defects were determined by transmission electron microscopy. Formation mechanisms of the microstructural defects are discussed.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 8 )