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Experimental evidence for light trapping in glass/conductive transparent oxide/p‐i‐n/metal hydrogenated amorphous silicon solar cell structures is presented. A short‐circuit current of 17.8 mA/cm2 has previously been reported for a cell made with this structure. The light trapping is treated by a modification of the Yablonovitch–Cody (YC) statistical theory of light trapping in textured layers [E. Yablonovitch and G. D. Cody, IEEE Trans. Electron. Devices ED‐29, 300 (1982)]. Reflection measurements show that 80% of the incident light is trapped. Quantum efficiency measurements made on cells with back electrode metals of different reflectivity are shown to be in agreement with the predictions of the YC theory.