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Hot electrons in one dimension

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1 Author(s)
Mahan, G.D. ; Corporate Research and Development, General Electric Company, Schenectady, New York 12301

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.335941 

An exact solution is given in one dimension for the electron distribution as limited by optical phonon scattering. The solution is valid for an arbitrary shape of potential energy, and current flow. Numerical results are presented for both constant field devices, and for the nonconstant fields of a typical metal‐oxide‐semiconductor‐field‐effect transistor (MOSFET) channel in silicon.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 6 )