By Topic

Hot electrons in one dimension

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Mahan, G.D. ; Corporate Research and Development, General Electric Company, Schenectady, New York 12301

Your organization might have access to this article on the publisher's site. To check, click on this link: 

An exact solution is given in one dimension for the electron distribution as limited by optical phonon scattering. The solution is valid for an arbitrary shape of potential energy, and current flow. Numerical results are presented for both constant field devices, and for the nonconstant fields of a typical metal‐oxide‐semiconductor‐field‐effect transistor (MOSFET) channel in silicon.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 6 )