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Thermally generated electron traps in boron‐implanted, phosphorus‐doped silicon

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2 Author(s)
Jackson, Daniel B. ; Department of Electrical Engineering, University of Illinois, Urbana, Illinois 61801 ; Sah, C.T.

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Observation of six electron traps in boron‐implanted, phosphorus‐doped silicon following annealing at temperatures near 400 °C is reported. Emission rate, cross section, and thermal activation energy measurements of trapped electrons are reported. Isochronal annealing information indicates that the traps are not present in the as‐implanted silicon; they are formed during heat treatment at temperatures near 400 °C. Comparison with previous studies indicated that the trap E200(0.424) [peak temperature (activation energy)] may be an oxygen and/or phosphorus complex, and that a second trap, E145(0.320), may be a phosphorus complex.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 6 )

Date of Publication:

Sep 1985

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