By Topic

Thermally generated electron traps in boron‐implanted, phosphorus‐doped silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jackson, Daniel B. ; Department of Electrical Engineering, University of Illinois, Urbana, Illinois 61801 ; Sah, C.T.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.335938 

Observation of six electron traps in boron‐implanted, phosphorus‐doped silicon following annealing at temperatures near 400 °C is reported. Emission rate, cross section, and thermal activation energy measurements of trapped electrons are reported. Isochronal annealing information indicates that the traps are not present in the as‐implanted silicon; they are formed during heat treatment at temperatures near 400 °C. Comparison with previous studies indicated that the trap E200(0.424) [peak temperature (activation energy)] may be an oxygen and/or phosphorus complex, and that a second trap, E145(0.320), may be a phosphorus complex.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 6 )