Electron traps in bulk n‐type Hg0.7Cd0.3Te were investigated near the HgCdTe/SiO2 interface by use of deep level transient spectroscopy on metal‐insulator‐semiconductor structures [D. V. Lang, J. Appl. Phys. 45, 3022 (1974)]. Three electron traps are found with activation energies (relative to the conduction band edge) of 0.12, 0.172, and 0.079 eV, and corresponding capture cross sections of 3.5×10-18, 1.1×10-16, and 1.2×10-18 cm2. Depth profiles from the surface to ∼1.0 μm show the concentration of the 0.172‐eV trap to be uniform while the 0.12‐eV trap shows a strong depth dependence. It is undetectable at the surface, rising in concentration to twice its bulk value at ∼0.5 μm depth then falling to a value comparable with that of the 0.172‐eV trap in the bulk (1 μm). Divalent trapping behavior has also been detected. In this case, the deeper state significantly depopulates, enabling a shallower state to then depopulate [J. S. Blakemore, Semiconductor Statistics (Pergamon, London, 1962), p. 156].