Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.335988
Variable temperature Hall‐effect measurements on low‐concentration Si:In samples show the existence of supershallow levels with an activation energy for ionization of about 18 meV. For high concentration Si:In samples, the levels at 18 meV tend to disappear and transform into levels with energy of about 160 meV.