By Topic

Validity of self‐bias voltage measurements on insulating electrodes in radio‐frequency dry etching systems

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
de Vries, C.A.M. ; Philips Research Laboratories, P. O. Box 80.000, 5600 JA Eindhoven, The Netherlands ; van den Hoek, W.G.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.335968 

It is demonstrated that the measured value of the self‐bias voltage on electrodes with an insulating target plate in a radio‐frequency dry etching system is strongly influenced by the configuration of the electrode, and may have no straightforward relation with the actual self‐bias voltage between the target surface and ground. The mechanism allowing measurement of the self‐bias voltage is identified as plasma‐induced surface conduction on the insulating target plate assisted by high electric fields at the target plate edge.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 5 )