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Dark current transport mechanism of p‐i‐n hydrogenated amorphous silicon diodes

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4 Author(s)
Matsuura, Hideharu ; Electrotechnical Laboratory, 1‐1‐4 Umezono, Sakura‐mura, Niihari‐gun, Ibaraki 305, Japan ; Matsuda, Akihisa ; Okushi, Hideyo ; Tanaka, Kazunobu

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The dark current‐voltage characteristics of p‐i‐n hydrogenated amorphous silicon diodes with various thicknesses of the intrinsic layer (i‐layer) (770–9300 Å) are systematically investigated. The magnitude of the forward current is found to be independent of thickness of the i layer, which is obviously against the simple conventional junction theory. It has been demonstrated through various experiments that the forward current of amorphous p‐i‐n diodes is limited by a layer thinner than 770 Å, possibly being the p/i interface or a narrow zone of the i layer.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 4 )