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Observation of single‐carrier space‐charge‐limited flow in nitrogen‐doped α‐silicon carbide. II. Electrical noise

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4 Author(s)
Tehrani, S. ; Departments of Electrical Engineering and of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 ; Hench, L.L. ; Van Vliet, C.M. ; Bosman, G.

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Noise spectra of α‐SiC in the presence of space‐charge‐limited flow are attributed to trapping noise. In the ohmic regime, SΔI∝ I20 and in the ohmic and low‐voltage quadratic regime SΔI∝I0∥V0∥ as required by the theory. The trapping levels are determined from the slope of the time constants versus 1/T; the results are in fair agreement with those obtained from the current‐voltage characteristic. The magnitude of the noise requires a modulation mechanism, such as caused by mobility fluctuations in the temperature range where ionized impurity scattering dominates.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 4 )