By Topic

Crystal orientation dependence of the electrical transport and lattice structure of zinc selenide films grown by metalorganic chemical vapor deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Stutius, W. ; Xerox Palo Alto Research Center, Palo Alto, California 94304 ; Ponce, F.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.336089 

ZnSe films have been grown on 〈100〉, 〈110〉, and 〈111〉B GaAs surfaces, using the metalorganic chemical vapor deposition technique. The electrical transport properties and lattice structure characteristics of these films have been studied using a van der Pauw technique and high‐resolution transmission electron microscopy. The electrical and structural properties of these films vary significantly with growth direction. In (100) layers, the observed defects are similar in nature to isolated compensated centers. For other orientations, observed properties are best described in terms of extended defects and grain boundaries.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 4 )