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Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy

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6 Author(s)
Ueda, Osamu ; Fujitsu Laboratories Ltd., 10‐1 Morinosato‐Wakamiya, Atsugi 243‐01, Japan ; Wakao, K. ; Komiya, Satoshi ; Yamaguchi, Akio
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Catastrophically degraded InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x‐ray spectroscopy. The degradation is mainly due to catastrophic optical damage at the facet, i.e., development of 〈110〉 dark‐line defects from the facet, and rarely due to catastrophic optical damage at some defects, i.e., development of 〈110〉 dark‐line defects from the defects inside the stripe region. These 〈110〉 dark‐line defects correspond to complicated dislocation networks connected with dark knots, and are quite similar to those observed in catastrophically degraded GaAlAs/GaAs double‐heterostructure lasers. The degradation characteristics of the InGaAsP/InGaP double‐heterostructure lasers are rather similar to those in GaAlAs/GaAs double‐heterostructure lasers concerning the catastrophic degradation.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 11 )

Date of Publication:

Dec 1985

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