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Transient current response in Pd‐SiO2‐Si structures during hydrogen absorption and desorption

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5 Author(s)
DAmico, A. ; Istituto di Elettronica dello Stato Solido‐CNR, Via Cineto Romano, 42, 00156 Roma, Italy ; Fortunato, G. ; Ruihua, W. ; Ricco, B.
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Transient current measurements have been performed on Pd‐gate metal‐oxide‐semiconductor capacitors at zero bias and room temperature, during hydrogen absorption and desorption. It is shown that a simple relationship among transient current, flat‐band voltage, and time‐dependent capacitance can fit the experimental data. Different possible origins of the transient current phenomenon are considered and discussed and the role played by the Na+ in delaying the transient current response is also illustrated.

Published in:

Journal of Applied Physics  (Volume:58 ,  Issue: 10 )