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Measurement of a long diffusion length in a GaAs film improved by metalorganic‐chemical‐vapor‐deposition source purifications

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7 Author(s)
Partain, L.D. ; Chevron Research Company, Richmond, California 94802‐0627 ; Cohen, M.J. ; Cape, J.A. ; Fraas, L.M.
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The vacuum metalorganic‐chemical‐vapor‐deposition (Vacuum MOCVD) process was combined with two source purifications to grow p‐GaAs epitaxial films of high quality. Theoretical modeling of quantum yield spectra measured on a specially configured n+‐p sample determined the minority‐carrier electron diffusion length to be 10 μm to within a factor of 2 in the p layer. The p doping was reduced to the 5×1017 cm-3 level to avoid suppression of the diffusion length by Auger recombination. Multiple vacuum sublimations of dicyclopentadienyl magnesium (CP2Mg), the source of Mg for p doping, reduced the contamination by air and by cyclopentadiene (CP) by an order of magnitude. A dry ice/acetone cold trap was operated at slightly below 180‐Torr pressure to reduce the water vapor content of arsine, used as the As source, from the hundreds of ppm down level down to the 2 ppm range. The vacuum growth process reduced residual gas contamination. These techniques were combined to grow a p on n GaAs solar cell with an efficiency of 24% at air mass 1.5 (AM1.5).

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Journal of Applied Physics  (Volume:58 ,  Issue: 10 )