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Enhancement of the microwave magneto‐Kerr effect in semiconductors is discussed for the semiconductor being preceded by a semi‐infinite dielectric and by a quarter‐wave dielectric slab for both plane‐wave and guided‐wave cases. Expressions are developed that relate the amount of the enhancement to the relative permittivity of the dielectric. Experimental results are compared to the theoretically obtained expressions for the quarter‐wave case and the experimentally obtained values compare favorably with the theory.