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A microcontroller embedded with 4 Kbit ferroelectric non-volatile memory

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10 Author(s)
Fukushima, T. ; LSI Dev. Center, Matsushita Electron. Corp., Kyoto, Japan ; Kawahara, A. ; Nanba, T. ; Matsumoto, M.
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We have developed for the first time a 4-bit microcontroller (MCU) embedded with 4 Kbit ferroelectric non-volatile memory (FeRAM). The MCU integrating FeRAM demonstrates innovative characteristics such as high data storage speed. Low dissipation power and high endurance more than 10/sup 12/ cycles, neither of which has been realized with EEPROM and Flash EEPROM technology. The performances prove that the MCUs embedded with FeRAM will be one of "key" processors for multimedia devices such as PDA and cellular phone.

Published in:

VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on

Date of Conference:

13-15 June 1996

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