Referenced Items are not available for this document.
Thermal-assisted spin-transfer torque random access memory (STT-RAM) has been considered as a promising candidate of next-generation nonvolatile memory technology. We conducted finite element simulation on thermal dynamics in the programming process of thermal-assisted STT-RAM. Special attentions have been paid to the scalability and design space of the thermal-assist programming scheme by varying the memory element dimension and resistance-area product. We also provide systematic analysis and comparison between the thermal-assisted STT-RAM and standard STT-RAM. Discussions on the writeability and scalability of thermal-assisted STT-RAM are also conducted.
Published in:
VLSI, 2009. ISVLSI '09. IEEE Computer Society Annual Symposium on
Date of Conference: 13-15 May 2009
- Page(s):
- 217 - 222
- E-ISBN :
- 978-0-7695-3684-2
- Print ISBN:
- 978-1-4244-4408-3
- INSPEC Accession Number:
- 10719930
- Conference Location :
- Tampa, FL
- Digital Object Identifier :
- 10.1109/ISVLSI.2009.17
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