By Topic

Experimental Results of the Gamma-Ray Imaging Capability With a Si/CdTe Semiconductor Compton Camera

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
Takeda, S. ; Inst. of Space & Astronaut. Sci., Japan Aerosp. Exploration Agency, Sagamihara ; Aono, H. ; Okuyama, S. ; Ishikawa, S.-n.
more authors

A semiconductor Compton camera that combines silicon (Si) and cadmium telluride (CdTe) detectors was developed, and its imaging capability was examined with various kinds of gamma-ray targets such as a point source, arranged point sources and an extended source. The camera consists of one double-sided Si strip detector and four layers of CdTe pad detectors, and was designed to minimize the distance between a scatterer and the target. This is because the spatial resolution with Compton imaging improves as the target approaches the scatterer. This new camera realizes a minimum distance of 25 mm. By placing the target at a distance of 30 mm from the detector, resolving power better than 3 mm was demonstrated experimentally for a 364 keV (131I) gamma-ray. Positional determination with accuracy of 1 mm was also demonstrated. As a deconvolution method, we selected the iteration algorithm (called List-Mode Expectation-Maximizing Maximum Likelihood), and applied it to several kinds of experimental data. The Compton back projection images of the arranged point sources and an extended object were successfully deconvolved.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:56 ,  Issue: 3 )